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| KSH13007AF 0 KSH13007AF SEMIHOW REV.A1,Oct 2007 KSH13007AF 0 KSH13007AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor 80 Watts Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Junction Temperature Storage Temperature TC=25 unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 700 400 9 8 16 4 40 150 -65~150 UNIT V V V A A A W TO-220F 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage TC=25 unless otherwise noted SYMBOL VCEO IEBO hFE1 hFE2 VCE(sat) Test Condition IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=2A VCE=5V,IC=5A 5V,I 5A IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A IC=2A,IB=0.4A IC=5A,IB=1A VCB=10V, f=0.1MHz Min 400 Typ. Max Unit V 1 8 5 60 30 1 2 3 1.2 1.6 80 4 1.6 3.0 0.7 V V V V V *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time * Pulse Test: Pulse Width300s, Duty Cycle2% VBE(sat) Cob fT ton tstg tF VCE=10V,IC=0.5A , Vcc=125V, Ic=5A IB1=1A, IB2= -1A RL=50 Note. R hFE1 Classification O Y 15 ~ 28 26 ~ 39 O1(26~33), O2(31~39) Package Mark information. S YWW Z KSH13007AF S YWW Z SemiHow Symbol Y; year code, WW; week code hFE1 Classification 37 ~ 50 SEMIHOW REV.A1,Oct 2007 KSH13007AF 0 Typical Characteristics SEMIHOW REV.A1,Oct 2007 KSH13007AF 0 Typical Characteristics ( Continued ) SEMIHOW REV.A1,Oct 2007 KSH130 007AF Package Dimension TOTO-220F 0.20 0.20 0 20 8 3.1 .20 0 2.540.20 0.700.20 15.870.20 3.300.20 12 0.20 2.42 6.6 0.20 68 2.760.20 9. 0.20 .75 1.47max 0.800.20 2.54typ 2.54typ 0.500.20 Dimensions in Millimeters SEMIHOW REV.A1,Oct 2007 |
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